MEASUREMENT OF ALP GAP (001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引：20

作者：

WALDROP, JR

GRANT, RW

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-ray photoemission spectroscopy has been used to measure the valence band offset DELTAE(v) for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of DELTAE(v)=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP).

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页码：1617 / 1620

页数：4

相关论文

共 24 条

[1] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES [J].

ASAHI, H ;

ASAMI, K ;

WATANABE, T ;

YU, SJ ;

KANEKO, T ;

EMURA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1407-1409

[2] OPTICAL-PROPERTIES OF GAP/ALP SHORT-PERIOD SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

ASAMI, K ;

ASAHI, H ;

WATANABE, T ;

ENOKIDA, M ;

GONDA, S ;

FUJITA, S .

APPLIED PHYSICS LETTERS, 1993, 62 (01) :81-83

[3] SURFACE-STRUCTURE OF (100) GAP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

BAILLARGEON, JN ;

CHENG, KY ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1990, 56 (22) :2201-2203

[4] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[5] SURFACE RECONSTRUCTION GEOMETRY OF GAAS(001)-C(2X8) (2X4) BY HIGH ANGULAR RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION [J].

CHAMBERS, SA .

SURFACE SCIENCE, 1992, 261 (1-3) :48-56

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[7] POSSIBILITY OF HETEROSTRUCTURE BAND OFFSETS AS BULK PROPERTIES - TRANSITIVITY RULE AND ORIENTATION EFFECTS [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 38 (17) :12687-12690

[8] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].

HARRISON, WA ;

TERSOFF, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073

[9] THEORY OF BAND LINE-UPS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1231-1238

[10] ELECTRONIC-STRUCTURE OF GAP-ALP(100) SUPER-LATTICES [J].

KIM, JY ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :528-530