EFFECTS OF A FOWLER-NORDHEIM INJECTION ON THIN OXIDE MOS STRUCTURES

被引：4

作者：

BALLAND, B

PLOSSU, C

BARDY, S

PINARD, P

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1985年 / 20卷 / 04期

关键词：

D O I：

10.1051/rphysap:01985002004022500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：225 / 234

页数：10

共 22 条

[1]

BALK P, 1983, I PHYS C SER, V69

[2]

BALLAND B, 1985, DEFECTS CTR SIO2 CAR

[3]

BALLAND B, 1984, 16TH C SOL STAT DEV, P103

[4]

DEKEERSMAECKER RF, 1983, 8TH ESSDERC 83 S SOL

[5]

DEKEERSMAECKER RF, 1983, INSULATING FILMS SEM

DIMARIA, DJ .

[7]

DIMARIA DJ, 1978, 1 P INT TOP C PHYS S, P160

[8] DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :37-46

[9]

Feigl F. J., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P104

[10]

FISCHETTI MV, 1982, J APPL PHYS, V53