The effect of antimony-doping on Ge2Sb2Te5, a phase change material

被引：40

作者：

Choi, Kyu-Jeong ^{[1
]}

Yoon, Sung-Min ^{[1
]}

Lee, Nam-Yeal ^{[1
]}

Lee, Seung-Yun ^{[1
]}

Park, Young-Sam ^{[1
]}

Yu, Byoung-Gon ^{[1
]}

Ryu, Sang-Ouk ^{[2
]}

机构：

[1] ETRI, IT Convergence & Components Lab, Taejon 305700, South Korea

[2] Dankook Univ, Dept Elect Engn, Chungnam 330714, South Korea

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 23期

关键词：

Phase change memory; Phase transition; Ge2Sb2Te5; excess-Sb Ge2Sb2+xTe5;

D O I：

10.1016/j.tsf.2008.02.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and electrical resistance properties of excess-Sb Ge2Sb2+xTe5 (Sb-GST) films were investigated. As the Sb-doping concentration was increased, the face center cubic structure of Sb-GST films was no longer observed, at Sb concentrations exceeding 27%, the amorphous phase directly changed to hexagonal closed-packed structures. The crystallization temperature of the 27% Sb-GST film was 15 degrees C higher than that of the Ge2Sb2Te5 (GST) film. The activation energies of the Sb-GST films also were greater than those of the GST films. These results indicate an increase in the stability of the Sb-doped films in the amorphous state compared with GST films. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：8810 / 8812

页数：3

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