Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers

被引：48

作者：

Tabata, A

Leite, JR

Lima, AP

Silveira, E

Lemos, V

Frey, T

As, DJ

Schikora, D

Lischka, K

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

[3] Univ Gesamthsch Paderborn, FB Phys 6, D-33098 Paderborn, Germany

[4] UNESP, Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1-xN (0 less than or equal to x less than or equal to 0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A(1) (TO) and E-1 (TO) phonon frequencies of the hexagonal InxGa1-xN alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)01234-6].

引用

页码：1095 / 1097

页数：3

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