GROWTH OF INXGA1-XN AND INXAL1-XN ON GAAS METALORGANIC MOLECULAR-BEAM EPITAXY

InxGa1-xN (x=0.07-1.0) and InxAl1-xN (x=0.16-1.0) layers were grown on GaAs substrates by metalorganic molecular beam epitaxy. The films display strong n -type conductivity (n>10 cm-3) for a wide range of InGaN compositions but only a limited range for InA1N films. The use of a H2 rather than a He carrier gas produces a lower carrier concentration in the as-grown InGaN material. The surface morphology of the ternary layers is improved by the addition of A1 to the surface while it is degraded by the addition of Ga. Nonetheless, the InxGa1-xN is single crystal at low Ga concentrations with the lattice mismatch accommodated by a high density of stacking faults and microtwins. The InN layers contain only the cubic phase, while the ternaries contain both cubic and hexagonal phases. © 1995, American Vacuum Society. All rights reserved.