Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser

被引：38

作者：

Zou, Z ^{[1
]}

Huffaker, DL ^{[1
]}

Csutak, S ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the room-temperature, continuous-wave ground state lasing characteristics from a quantum dot vertical-cavity surface-emitting laser. A threshold current of 703 mu A is obtained for a 10-mu m-diameter oxide aperture using a three-stack active region, with the lasing wavelength of similar to 1.06 mu m. Lasing is obtained for apertures as small as 2 mu m square with threshold current of 268 mu A. The threshold conditions are discussed with an emphasis on the spontaneous and stimulated decay rates due to resonant excitation. (C) 1999 American Institute of Physics. [S0003-6951(99)05127-X].

引用

页码：22 / 24

页数：3

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