Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

被引:389
作者
Jariwala, Deep [1 ]
Sangwan, Vinod K. [1 ]
Wu, Chung-Chiang [1 ]
Prabhumirashi, Pradyumna L. [1 ]
Geier, Michael L. [1 ]
Marks, Tobin J. [1 ,2 ]
Lauhon, Lincoln J. [1 ]
Hersam, Mark C. [1 ,2 ,3 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Med, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
2D transition metal dichalcogenide; single layer MoS2; van der Waals heterostructure; rectifier; photodetector; BORON-NITRIDE; BAND-GAP; GRAPHENE; HETEROSTRUCTURES; TRANSISTORS; TRANSITION;
D O I
10.1073/pnas.1317226110
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance fieldeffect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse < 15 mu s. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, highperformance electronics and optoelectronics.
引用
收藏
页码:18076 / 18080
页数:5
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