A Fully Tunable Single-Walled Carbon Nanotube Diode

被引：46

作者：

Liu, Chang-Hua ^{[1
]}

Wu, Chung-Chiang ^{[1
]}

Zhong, Zhaohui ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 04期

基金：

美国国家科学基金会;

关键词：

Single-walled carbon nanotube; tunable diode; backward diode; band-to-band tunneling; BACKWARD DIODES; NANOELECTRONICS; TRANSISTORS;

D O I：

10.1021/nl200371z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is similar to 6 times the nanotube band gap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with non-linearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.

引用

页码：1782 / 1785

页数：4

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