Transport in carbon nanotube p-i-n diodes

被引：53

作者：

Bosnick, Ken ^{[1
]}

Gabor, Nathan

McEuen, Paul

机构：

[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

[2] Natl Res Council Canada, Natl Inst Nanotechnol, Edmonton, AB T6G 2M9, Canada

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2360895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-walled carbon nanotube diodes are fabricated in a split-gate geometry with electron (n) and hole (p) regions separated by a central region. With the central region gated p or n type the diodes "leak" at low voltages, likely due to tunneling across the smaller depletion region. With the central region intrinsic, nearly ideal diode behavior is observed. Comparison to theory for a one-dimensional diode yields the band gap of the tube and the transmission coefficient through the junction. In reverse bias, the breakdown voltage depends weakly on temperature and nanotube diameter. Comparisons are made to predictions for Zener tunneling and avalanche breakdown.

引用

页数：3

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