Carbon nanotube p-n junction diodes

被引：200

作者：

Lee, JU ^{[1
]}

Gipp, PP ^{[1
]}

Heller, CM ^{[1
]}

机构：

[1] GE Global Res Ctr, Niskayuna, NY 12309 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 01期

关键词：

All Open Access; Bronze;

D O I：

10.1063/1.1769595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a single-walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube by electrostatic doping using a pair of split gate electrodes. By biasing the two gates accordingly, the device can function either as a diode or as an ambipolar field-effect transistor. The diode current-voltage characteristics show forward conduction and reverse blocking characteristics, i.e., rectification. For low bias conditions, the characteristics follow the ideal diode equation with an ideality factor close to one. (C) 2004 American Institute of Physics.

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页码：145 / 147

页数：3

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