Chemistry for positive pattern transfer using area-selective atomic layer deposition

被引：152

作者：

Chen, R

Bent, SF

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 08期

关键词：

D O I：

10.1002/adma.200502470

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A chemically selective process to achieve high-resolution area-selective atomic layer deposition (ALD) of Pt thin films on dielectrics (see figure) is introduced. By utilizing the intrinsically selective adsorption behavior of 1-octadecene, a monolayer resist is attached only to the hydride-terminated silicon regions of a patterned SiO(2)/Si substrate. Subsequently, a Pt thin film is selectively deposited only onto the oxide regions by ALD.

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页码：1086 / +

页数：6

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