Atomic layer deposition of platinum thin films

被引：339

作者：

Aaltonen, T

Ritala, M

Sajavaara, T

Keinonen, J

Leskelä, M

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Sci, FIN-00014 Helsinki, Finland

来源：

CHEMISTRY OF MATERIALS | 2003年 / 15卷 / 09期

关键词：

D O I：

10.1021/cm021333t

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Platinum thin films were grown at 300 T by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 Angstrom cycle(-1) were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed.

引用

页码：1924 / 1928

页数：5

共 27 条

[1] Ruthenium thin films grown by atomic layer deposition
Aaltonen, T
Alén, P
Ritala, M
Leskelä, M
[J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) : 45 - 49
[2] A MOLECULAR-BEAM STUDY OF THE ADSORPTION AND DESORPTION OF OXYGEN FROM A PT(111)SURFACE
CAMPBELL, CT
ERTL, G
KUIPERS, H
SEGNER, J
[J]. SURFACE SCIENCE, 1981, 107 (01) : 220 - 236
[3] LOW-TEMPERATURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF PLATINUM
CHEN, YJ
KAESZ, HD
THRIDANDAM, H
HICKS, RF
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1591 - 1592
[4] OXYGEN INTERACTIONS WITH THE PT(111) SURFACE
GLAND, JL
SEXTON, BA
FISHER, GB
[J]. SURFACE SCIENCE, 1980, 95 (2-3) : 587 - 602
[5] Properties of platinum films by liquid-source MOCVD in H2 and O2
Goswami, J
Majhi, P
Wang, CG
Dey, SK
[J]. INTEGRATED FERROELECTRICS, 2002, 42 : 13 - 23
[6] Platinum film growth by chemical vapor deposition based on autocatalytic oxidative decomposition
Hiratani, M
Nabatame, T
Matsui, Y
Imagawa, K
Kimura, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (08) : C524 - C527
[7] Analysis of AlN thin films by combining TOF-ERDA and NRB techniques
Jokinen, J
Haussalo, P
Keinonen, J
Ritala, M
Riihela, D
Leskela, M
[J]. THIN SOLID FILMS, 1996, 289 (1-2) : 159 - 165
[8] Comparison of TOF-ERDA and nuclear resonance reaction techniques for range profile measurements of keV energy implants
Jokinen, J
Keinonen, J
Tikkanen, P
Kuronen, A
Ahlgren, T
Nordlund, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 119 (04) : 533 - 542
[9] STUDY OF EPITAXIAL PLATINUM THIN-FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KWAK, BS
FIRST, PN
ERBIL, A
WILKENS, BJ
BUDAI, JD
CHISHOLM, MF
BOATNER, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3735 - 3740
[10] Characterization of Pt thin films deposited by metallorganic chemical vapor deposition for ferroelectric bottom electrodes
Kwon, JH
Yoon, SG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : 2848 - 2854

← 1 2 3 →