POSFET touch sensor with CMOS integrated signal conditioning electronics

被引：26

作者：

Adami, A. ^{[1
]}

Dahiya, R. S. ^{[1
]}

Collini, C. ^{[1
]}

Cattin, D. ^{[2
]}

Lorenzelli, L. ^{[1
]}

机构：

[1] Fdn Bruno Kessler, I-38123 Trento, Italy

[2] Univ Padua, I-36100 Vicenza, Italy

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2012年 / 188卷

关键词：

POSFET; CMOS; Tactile sensing; Signal conditioning; On-chip electronics; LARGE-AREA;

D O I：

10.1016/j.sna.2012.02.046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

This paper presents the design, fabrication and evaluation of the new version of POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing device based tactile sensing chip. Implemented using CMOS (Complementary Metal Oxide Semiconductor) technology, the chip consists of POSFET device and the integrated bias and signal conditioning circuitry. In particular, a high compliance current sink and an output buffer have been integrated to respectively bias the POSFET device and to decouple the sensor from chip output. The performance of tactile sensing chip has been evaluated in the dynamic contact forces range of 0.01-3 N and the sensitivity of POSFET devices (without amplification) is 102.4 mV/N. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：75 / 81

页数：7

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[2]

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[3]

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[4]

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