Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon

被引：69

作者：

Kim, Dae-Hyeong ^{[1
,2
]}

Ahn, Jong-Hyun ^{[1
,2
]}

Kim, Hoon-Sik ^{[1
,2
]}

Lee, Keon Jac ^{[1
,2
]}

Kim, Tae-Ho ^{[1
,2
]}

Yu, Chang-Jae ^{[1
,2
,3
]}

Nuzzo, Ralph G. ^{[1
,2
]}

Rogers, John A. ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Dept Chem, Urbana, IL 61801 USA

[3] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

CMOS inverter; flexible circuits; thin-film transistor (TIFT);

D O I：

10.1109/LED.2007.910770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as similar to 150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.

引用

页码：73 / 76

页数：4

共 22 条

[1]

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[2] Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon [J].