High-mobility organic single crystal transistors with submicrometer channels

被引：12

作者：

Kawanishi, Takafumi ^{[1
]}

Fujiwara, Takaaki ^{[1
]}

Akai-Kasaya, Megumi ^{[1
,2
]}

Saito, Akira ^{[1
,2
]}

Aono, Masakazu ^{[3
]}

Takeya, Junichi ^{[2
,4
]}

Kuwahara, Yuji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Natl Inst Mat Sci, Nano Syst Funct Ctr, Tsukuba, Ibaraki 3050003, Japan

[4] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2953179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate high-performance electric-field effects in submicrometer-channel organic transistors with rubrene single crystals. Platinum source and drain electrodes are embedded in silicon dioxide gate insulators to reduce thickness of the dielectrics and to minimize the short-channel effect. The miniaturized devices exhibit typical output characteristics with Ohmic linear region, well-defined current saturation, and on-off ratio of 10(6). Mobility values are in the range of 0.1-0.3 cm(2)/V s, which is comparable to those of the best submicrometer organic transistors. Anisotropy in the mobility is detected, indicating that bandlike transport is responsible for the high transistor performance of the short-channel devices. (C) 2008 American Institute of Physics.

引用

页数：3

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