Giant photoresistivity and optically controlled switching in self-assembled nanowires

被引：115

作者：

Kouklin, N ^{[1
]}

Menon, L ^{[1
]}

Wong, AZ ^{[1
]}

Thompson, DW ^{[1
]}

Woollam, JA ^{[1
]}

Williams, PF ^{[1
]}

Bandyopadhyay, S ^{[1
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 26期

关键词：

D O I：

10.1063/1.1427156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches. (C) 2001 American Institute of Physics.

引用

页码：4423 / 4425

页数：3

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[3]

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