AN OPTICALLY CONTROLLED CLOSING AND OPENING SEMICONDUCTOR SWITCH

被引：41

作者：

SCHOENBACH, KH

LAKDAWALA, VK

GERMER, R

KO, ST

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.341022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2460 / 2463

页数：4

共 15 条

[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].

BLANC, J ;

MACDONALD, HE ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&

[2]

BOVINO L, 1986, 17TH IEEE C REC POW, P219

[3]

BROSER I, 1957, Z ELEKTROCHEM, V61, P209

[4]

CHANCHARD EA, 1985, APPL PHYS LETT, V47, P1293

[5] HIGH-SPEED OPTOELECTRONIC GALLIUM-ARSENIDE SWITCH TRIGGERED BY MODE-LOCKED LASER-PULSES [J].

DEMOKAN, MS ;

OZYAZICI, MS .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 55 (05) :699-727

[6]

GERMER R, UNPUB

[7] COPPER-RELATED DEEP LEVEL DEFECTS IN III-V-SEMICONDUCTORS [J].

KULLENDORFF, N ;

JANSSON, L ;

LEDEBO, LA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3203-3212

[8] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[9]

MADELUNG O, 1982, LANDOLTBORNSTEIN G B, V17, P417

[10]

MORSE JD, 1986, 17TH IEEE C REC POW, P211

← 1 2 →