Model for the oxide thickness dependence of SILC generation based on anode hole injection process

被引：8

作者：

Jahan, C

Bruyère, S

Ghibaudo, G

Vincent, E

Barla, K

机构：

[1] ST Microelect, France Telecom, Ctr Commun, F-38921 Crolles, France

[2] ENSERG, LPCS, F-38016 Grenoble, France

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期

关键词：

D O I：

10.1016/S0026-2714(99)00102-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for the oxide thickness dependence of the SILC generation has been proposed on the basis of defects created by anode hole injection. This model which has been validated on oxides with thickness down to approximate to 3nm, allows the explanation of the bell-shaped behavior of the SILC variation with oxide thickness and predicts a strong reduction of the SILC intensity for ultra thin oxides operated in the direct tunneling regime. (C) 1999 Elsevier Science Ltd. All rights reserved.

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收藏

页码：791 / 795

页数：5

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