Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

被引：15

作者：

Ankudinov, AV ^{[1
]}

Titkov, AN

Shubina, TV

Ivanov, SV

Kop'ev, PS

Lugauer, HJ

Reuscher, G

Keim, M

Waag, A

Landwehr, G

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy (AFM) of cleaved facets of ZnSe-based lasers with various active region designs is reported. Different AFM probe friction on the materials forming the laser structures are exploited for imaging their basic layers. Unlike ZnMgSSe-based lasers, the cleaved surface of cladding layers in BeMgZnSe-based structures is atomically flat, which is attributed to hardening of the II-VI materials by Be incorporation. Nanometer-high steps and undulations are observed at the laser heterointerfaces on cleaved facets. The shape and height of such topographic singularities located in the vicinity of a (Zn,Cd)Se quantum well active region depend on the strain distribution in the laser waveguide. (C) 1999 American Institute of Physics. [S0003-6951(99)05343-7].

引用

页码：2626 / 2628

页数：3

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