Significant progress in II-VI blue-green laser diode lifetime

被引：189

作者：

Kato, E ^{[1
]}

Noguchi, H ^{[1
]}

Nagai, M ^{[1
]}

Okuyama, H ^{[1
]}

Kijima, S ^{[1
]}

Ishibashi, A ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 03期

关键词：

D O I：

10.1049/el:19980229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A II-VI laser diode lifetime of > 140h at 40 degrees C, as well as similar to 400h at 20 degrees C, has been achieved for a ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure laser diode under continuous-wave operation with a constant output power of 1 mW. Progress has been made towards increasing the basic reliability of ZnMgSSe-based wide bandgap laser diodes by reducing point defects.

引用

页码：282 / 284

页数：3

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