ZNMGSSE BASED LASER-DIODES

被引：16

作者：

ITOH, S

ISHIBASHI, A

机构：

[1] Sony Corporation Research Center, Yokohama, 240, Fujitsuka 174, Hodogaya-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80031-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have demonstrated the feasibility of ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure lasers for future device applications. The Cl-doped epitaxial films with different buffer layers have been grown on the n-GaAs substrate to study the crystal defects such as stacking faults, which lead to failure of laser diodes. The growth of the laser structure with a ZnSe buffer layer on GaAs buffer layer has led to several minute-long continuous-wave (CW) operation.

引用

页码：701 / 706

页数：6

共 21 条

[1] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE [J].

FAN, Y ;

HAN, J ;

HE, L ;

SARAIE, J ;

GUNSHOR, RL ;

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

HUA, GC ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3160-3162

[2] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].

GAINES, JM ;

DRENTEN, RR ;

HABERERN, KW ;

MARSHALL, T ;

MENSZ, P ;

PETRUZZELLO, J .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464

[3] STRUCTURAL QUALITY AND THE GROWTH MODE IN EPITAXIAL ZNSE/GAAS(100) [J].

GUHA, S ;

MUNEKATA, H ;

CHANG, LL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2294-2300

[4] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS [J].

GUHA, S ;

DEPUYDT, JM ;

HAASE, MA ;

QIU, J ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3107-3109

[5] ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES [J].

GUHA, S ;

DEPUYDT, JM ;

QIU, J ;

HOFLER, GE ;

HAASE, MA ;

WU, BJ ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3023-3025

[6] LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES [J].

HAASE, MA ;

BAUDE, PF ;

HAGEDORN, MS ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H ;

GUHA, S ;

HOFLER, GE ;

WU, BJ .

APPLIED PHYSICS LETTERS, 1993, 63 (17) :2315-2317

[7] OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS [J].

HIEI, F ;

IKEDA, M ;

OZAWA, M ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1993, 29 (10) :878-879

[8] ZNCDSE/ZNSE/ZNMGSSE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER-DIODE WITH VARIOUS CD MOLE FRACTIONS [J].

ITOH, S ;

NAKAYAMA, N ;

OHATA, T ;

OZAWA, M ;

OKUYAMA, H ;

NAKANO, K ;

IKEDA, M ;

ISHIBASHI, A ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (5A) :L639-L642

[9] ROOM-TEMPERATURE PULSED OPERATION OF 498NM LASER WITH ZNMGSSE CLADDING LAYERS [J].

ITOH, S ;

OKUYAMA, H ;

MATSUMOTO, S ;

NAKAYAMA, N ;

OHATA, T ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1993, 29 (09) :766-768

[10] ZNCDSE/ZNSSE/ZNMGSSE SCH LASER-DIODE WITH A GAAS BUFFER LAYER [J].

ITOH, S ;

NAKAYAMA, N ;

MATSUMOTO, S ;

NAGAI, M ;

NAKANO, K ;

OZAWA, M ;

OKUYAMA, H ;

TOMIYA, S ;

OHATA, T ;

IKEDA, M ;

ISHIBASHI, A ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7A) :L938-L940

← 1 2 3 →