ZNCDSE/ZNSE/ZNMGSSE SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER-DIODE WITH VARIOUS CD MOLE FRACTIONS

被引：33

作者：

ITOH, S

NAKAYAMA, N

OHATA, T

OZAWA, M

OKUYAMA, H

NAKANO, K

IKEDA, M

ISHIBASHI, A

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5A期

关键词：

SEMICONDUCTOR LASERS; II-VI; ZNMGSSE; SCH;

D O I：

10.1143/JJAP.33.L639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe separate-confinement heterostructure (SCH) lasers has been achieved in a wavelength range from 485.7 to 521.6 nm. We have achieved shorter wavelength blue at room temperature than thus far reported. A decrease in threshold current density J(th) and a increase in the slope efficiency for ZnCdSe/ZnSe/ZnMgSSe SCH laser diodes were observed as the energy difference between the active and cladding layers was increased. We determined that more than 0.35 eV for DELTAE(g) is necessary in order to suppress the carrier overflow. A high characteristic temperature T0 of 217 K was achieved for a laser diode with DELTAE(g) of 0.40 eV.

引用

页码：L639 / L642

页数：4

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