BLUE-GREEN II-VI LASER-DIODES

被引:52
作者
WALKER, CT
DEPUYDT, JM
HAASE, MA
QIU, J
CHENG, H
机构
[1] 3M Company, St. Paul
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90212-O
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The first blue-green laser diodes were demonstrated in our laboratories in early April 1991 using wide band gap II-VI semiconductors. Since then, devices with emission wavelengths from 508 to 535 nm have been obtained in the pulsed mode at room temperature with threshold current densities about 1000 A/cm2. Continuous wave devices have also been operated at 80 K emitting more than 3 mW/facet. These diodes are separate confinement devices with single CdxZn1-xSe strained quantum wells within ZnSe p-n junctions. Optical confinement is accomplished by surrounding the ZnSe guide with ZnS0.07Se0.93 cladding layers. Characteristics of these devices and the issues standing in the way of commercializing II-VI LEDs and diode lasers are discussed.
引用
收藏
页码:27 / 35
页数:9
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