Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

被引：48

作者：

Stille, S. ^{[1
,2
]}

Lenser, Ch ^{[3
,4
]}

Dittmann, R. ^{[3
,4
]}

Koehl, A. ^{[3
,4
]}

Krug, I. ^{[3
,4
]}

Muenstermann, R. ^{[3
,4
]}

Perlich, J. ^{[5
]}

Schneider, C. M. ^{[3
,4
]}

Klemradt, U. ^{[1
,2
]}

Waser, R. ^{[3
,4
,6
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

[2] Rhein Westfal TH Aachen, JARA FIT, D-52056 Aachen, Germany

[3] Forschungszentrum Julich, Peter Gruenberg Inst, D-52425 Julich, Germany

[4] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany

[5] DESY, HASYLAB, D-22607 Hamburg, Germany

[6] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol 2, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 22期

关键词：

RESISTANCE; MEMORY;

D O I：

10.1063/1.4724108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of Ti top electrodes on the resistive switching properties of SrTiO3 thin film devices. Above a Ti layer thickness of 5 nm, the initial resistance is strongly reduced, giving rise to forming-free devices. Hard x-ray photoemission experiments reveal the Ti layer to be composed of several oxide phases, induced by the redox-reaction at the Ti/SrTiO3 interface. Grazing incidence small angle x-ray scattering measurements indicate that the reduction of the SrTiO3 thin film occurs in a filamentary way. We attribute this behavior to the preferential reduction of SrTiO3 thin films along highly defective areas. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724108]

引用

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