An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance

被引：120

作者：

Chen, Yu-Sheng ^{[1
,2
]}

Lee, Heng-Yuan ^{[1
,2
]}

Chen, Pang-Shiu ^{[3
]}

Wu, Tai-Yuan ^{[1
]}

Wang, Ching-Chiun ^{[1
]}

Tzeng, Pei-Jer ^{[1
]}

Chen, Frederick ^{[1
]}

Tsai, Ming-Jinn ^{[1
]}

Lien, Chenhsin ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Minghsin Univ Sci & Technol, Dept Mat Sci & Engn, Hsinchu 304, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 12期

关键词：

Forming-free; HfOx; resistance memory; Ti top electrode; LOW-POWER;

D O I：

10.1109/LED.2010.2081658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A forming-free 3-nm-thick HfOx resistive memory device is demonstrated. The percolation threshold of insulating-to-conductive transition in the ultrathin HfOx can be lowered by using the Ti capping layer with an adequate post metal annealing. By the reaction between Ti and HfOx, oxygen ions are depleted from the oxide, and conductive percolative paths, which consist of charged oxygen vacancies, are formed. Without any forming step, the memory can operate with stable bipolar resistance switching by initial positive or negative voltage sweep. Possible scenarios of switching mechanism for the initial state of the device with different sweep directions are proposed. This forming-free device also exhibits an on/off ratio of about ten and excellent memory performances, including high speed (similar to 10 ns), low operation voltages (< 1.2 V), robust endurance (> 10(6) cycles), good nonvolatile property (500 min at 85 degrees C), and 2-b switching per cell.

引用

页码：1473 / 1475

页数：3

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