Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

被引：163

作者：

Lee, H. Y. ^{[1
,2
]}

Chen, Y. S. ^{[1
,2
]}

Chen, P. S. ^{[3
]}

Wu, T. Y. ^{[1
]}

Chen, F. ^{[1
]}

Wang, C. C. ^{[1
]}

Tzeng, P. J. ^{[1
]}

Tsai, M. -J. ^{[1
]}

Lien, C. ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 31040, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Minghsin Univ Sci & Technol, Dept Mat Sci & Engn, Hsinchu 304, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 01期

关键词：

HfOx; resistive memory; Ti reactive buffer layer;

D O I：

10.1109/LED.2009.2034670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing, a large amount of oxygen vacancies are left in the HfOx layer of the TiN/Ti/HfOx/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (> 100), this memory also exhibits reliable switching endurance (> 10(6) cycles), robust resistance states (200 degrees C), high device yield (similar to 100%), and fast switching speed (< 10 ns).

引用

页码：44 / 46

页数：3

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