Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth

被引：12

作者：

DHondt, M

Moerman, I

Demeester, P

机构：

[1] University of Gent - IMEC, Department of Information Technology, B-9000 Gent

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00602-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lattice mismatched MOVPE growth of In0.82Ga0.18As and InAs0.61P0.39 is described. A study of the influence of the InGaAs growth temperature results in an optimum around 590 degrees C. Also the influence of the buffer layer on the material quality (X-ray FWHM) is reported. Since these materials are intended for the fabrication of photodetectors in the 2.4 mu m region, also the etch behaviour and Zn diffusion (inside MOVPE reactor) are reported.

引用

页码：616 / 620

页数：5

共 8 条

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