ZINC DIFFUSION IN INP USING DIETHYLZINC AND PHOSPHINE

被引：31

作者：

WISSER, J

GLADE, M

SCHMIDT, HJ

HEIME, K

机构：

[1] Institut für Halbleitertechnik I, RWTH Aachen

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.350969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low pressure open tube system with diethylzinc (DEZn) and phosphine (PH3) as precursors was used to study the Zn-diffusion in InP. This system offers a flexible and precise control of the diffusion parameters. We investigated the effect of the DEZn and PH3 partial pressures and of the diffusion temperature and time on the hole and Zn concentration profiles. Annealing the samples leads to an increased hole concentration due to out-diffusion of interstitial Zn donors. The Zn and hole concentration profiles were obtained by secondary-ion mass spectroscopy and C-V etch profiling showing maximum hole concentrations between 10(17) cm-3 and 4 X 10(18) cm-3 for diffusion depths from 0.3 to 2-mu-m.

引用

页码：3234 / 3237

页数：4

共 23 条

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