ZN DIFFUSION IN IN1-XGAXP

被引：3

作者：

KIM, ST ^{[1
]}

MOON, DC ^{[1
]}

机构：

[1] KWANGWOON UNIV,DEPT ELECTR MAT ENGN,SEOUL 139,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 04期

关键词：

In[!sub]1-x[!/sub]Ga[!sub]x[!/sub]P; Zn diffusion;

D O I：

10.1143/JJAP.29.627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of Zn diffusion in the III-V ternary alloy semiconductor In1-xGaxP have been investigated. The Zn diffusion depth changed in proportion to the square root of diffusion time and decreased with composition of In1-xGaxP. The effective diffusion constant at a given temperature was decreased with composition, while the activation energy for Zn diffusion was increased, due to a lower contribution of the interstitial diffusion with increasing Ga atom content in In1-xGaxP. © 1990 The Japan Society of Applied Physics.

引用

页码：627 / 629

页数：3

共 14 条

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