RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS

被引：34

作者：

DEMEESTER, P

ACKAERT, A

COUDENYS, G

MOERMAN, I

BUYDENS, L

POLLENTIER, I

VANDAELE, P

机构：

[1] University of Gent - IMEC, Laboratory of Electromagnetism and Acoustics, B-9000 Gent

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1991年 / 22卷 / 1-2期

关键词：

D O I：

10.1016/0960-8974(91)90025-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The fast increase in complexity of electronic and optoelectronic systems has created a need for high performance and multifunctional integrated circuits. One of the major restrictions is the lattice matching condition which severely limits the number of possible material combinations that can be used. This paper will review recent developments in the relaxed combination of III-V semiconductors with lattice mismatched substrates. Emphasis will be put on the problems encountered, the possible solutions and the device applications. The material combinations which will be discussed are: GaAs/AlGaAs on Si and InP substrates and InP/InGaAsP on Si and GaAs substrates.

引用

页码：53 / 141

页数：89

共 250 条

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