AL0.3GA0.7AS/GAAS METAL-INSULATOR-SEMICONDUCTOR-TYPE FIELD-EFFECT TRANSISTOR FABRICATED ON AN INP SUBSTRATE

[1] ALAMO JAD, 1987, IEEE ELECTR DEVICE L, V8, P534

[2] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[4] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1186 - 1188

[5] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[6] MONOLITHIC OPTOELECTRONIC INTEGRATION - A NEW COMPONENT TECHNOLOGY FOR LIGHTWAVE COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2640 - 2655

[7] Itoh T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P771

[8] A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) : 518 - 520

[9] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITY BETWEEN IN0.53GA0.47AS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1709 - 1712

[10] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1217 - 1219

[1] ALAMO JAD, 1987, IEEE ELECTR DEVICE L, V8, P534

[2] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[4] MOVPE INGAAS/INP GROWN DIRECTLY ON GAAS SUBSTRATES [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1186 - 1188

[5] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[6] MONOLITHIC OPTOELECTRONIC INTEGRATION - A NEW COMPONENT TECHNOLOGY FOR LIGHTWAVE COMMUNICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2640 - 2655

[7] Itoh T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P771

[8] A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) : 518 - 520

[9] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITY BETWEEN IN0.53GA0.47AS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1709 - 1712

[10] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1217 - 1219