VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS

[1] AMBRIDGE T, 1975, I PHYS C SER, V24, P320

[2] THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 225 - 234

[3] MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 190 - 196

[4] FAIRMAN RD, 1977, C SER I PHYSICS, V336, P45

[5] Milnes A.G., 1972, HETEROJUNCTIONS META, DOI DOI 10.1016/j.nima.2004.05.071

[6] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[7] Olsen G. H., 1982, GaInAsP alloy semiconductors, P11

[8] EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5523 - 5529

[9] RAZEGHI M, 1984, I PHYS C SER, V74, P679

[10] EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) : 1142 - +

[1] AMBRIDGE T, 1975, I PHYS C SER, V24, P320

[2] THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 225 - 234

[3] MULTILAYERED STRUCTURES OF EPITAXIAL INDIUM-PHOSPHIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 190 - 196

[4] FAIRMAN RD, 1977, C SER I PHYSICS, V336, P45

[5] Milnes A.G., 1972, HETEROJUNCTIONS META, DOI DOI 10.1016/j.nima.2004.05.071

[6] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[7] Olsen G. H., 1982, GaInAsP alloy semiconductors, P11

[8] EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5523 - 5529

[9] RAZEGHI M, 1984, I PHYS C SER, V74, P679

[10] EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) : 1142 - +