DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITY BETWEEN IN0.53GA0.47AS

被引：46

作者：

PENG, CK ^{[1
]}

KETTERSON, A ^{[1
]}

MORKOC, H ^{[1
]}

SOLOMON, PM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.337262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1709 / 1712

页数：4

共 11 条

[1] ELECTRICAL CHARACTERIZATION OF GAAS/ALGAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR CAPACITORS AND APPLICATION TO THE MEASUREMENT OF THE GAAS/ALGAAS BAND-GAP DISCONTINUITY
ARNOLD, D
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KLEM, J
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2880 - 2885
[2] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[3] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS
HICKMOTT, TW
SOLOMON, PM
FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2844 - 2853
[4] HIROSE K, 1986, I PHYS C SER, V79, P529
[5] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP
OLEGO, D
CHANG, TY
SILBERG, E
CARIDI, EA
PINCZUK, A
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 476 - 478
[6] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING
PEOPLE, R
WECHT, KW
ALAVI, K
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 118 - 120
[7] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS
SOLOMON, PM
HICKMOTT, TW
MORKOC, H
FISCHER, R
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 821 - 823
[8] STERN F, 1984, PHYS REV B, V30, P84
[9] Sze S M, 1981, PHYSICS SEMICONDUCTO, P258
[10] EXACT LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR (MOS) AND SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURES
TEMPLE, VAK
SHEWCHUN, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (04) : 235 - &

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