EXACT LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR (MOS) AND SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURES

被引：17

作者：

TEMPLE, VAK

SHEWCHUN, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1971年 / ED18卷 / 04期

关键词：

D O I：

10.1109/T-ED.1971.17181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：235 / &

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