SPACE CHARGE REGIONS IN SEMICONDUCTORS

被引：9

作者：

GOLDBERG, C

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 08期

关键词：

D O I：

10.1016/0038-1101(64)90104-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：593 / 609

页数：17

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共 7 条

[1] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
[2] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[3] Kingston RH, 1957, SEMICONDUCTOR SURFAC
[4] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION
MORGAN, SP
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602
[5] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS
SAH, CT
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03): : 603 - &
[6] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[7] EXTENDED CURVES OF SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT SURFACE OF A SEMICONDUCTOR, AND CURVES OF ELECTROSTATIC POTENTIAL INSIDE A SEMICONDUCTOR
YOUNG, CE
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) : 329 - &