ALGAAS/GAAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON INP BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

AGARWALA, S ^{[1
]}

WON, T ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.100745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1151 / 1153

页数：3

共 10 条

[1] AL0.3GA0.7AS/GAAS METAL-INSULATOR-SEMICONDUCTOR-TYPE FIELD-EFFECT TRANSISTOR FABRICATED ON AN INP SUBSTRATE
AGARWALA, S
PATIL, MB
PENG, CK
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (06) : 493 - 494
[2] GAAS-MESFETS FABRICATED ON INP SUBSTRATES
ASANO, K
KASAHARA, K
ITOH, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290
[3] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)
FISCHER, R
NEUMAN, D
ZABEL, H
MORKOC, H
CHOI, C
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225
[4] PHOTOLUMINESCENCE STUDIES OF GAAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY
HUANG, D
AGARWALA, S
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (01) : 51 - 53
[5] ITOH H, 1987, ELECTRON LETT, V23, P394
[6] HIGH-PERFORMANCE GAAS-MESFETS FABRICATED ON MISORIENTED (100) INP SUBSTRATES BY HETEROEPITAXY
LO, YH
HARBISON, J
ABELES, JH
LEE, TP
NAHORY, RE
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 383 - 384
[7] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY
MASSELINK, WT
HENDERSON, T
KLEM, J
FISCHER, R
PEARAH, P
MORKOC, H
HAFICH, M
WANG, PD
ROBINSON, GY
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1309 - 1311
[8] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS
MATTHEWS, JW
BLAKESLEE, AE
MADER, S
[J]. THIN SOLID FILMS, 1976, 33 (02) : 253 - 266
[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[10] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
METZE, GM
CHOI, HK
TSAUR, BY
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109

← 1 →