PHOTOLUMINESCENCE STUDIES OF GAAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

HUANG, D

AGARWALA, S

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：51 / 53

页数：3

共 11 条

[1] AL0.3GA0.7AS/GAAS METAL-INSULATOR-SEMICONDUCTOR-TYPE FIELD-EFFECT TRANSISTOR FABRICATED ON AN INP SUBSTRATE [J].

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PATIL, MB ;

PENG, CK ;

MORKOC, H .

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[2] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J].

ASANO, K ;

KASAHARA, K ;

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :289-290

[3] RESONANT PHOTOLUMINESCENCE STUDIES OF THE GROWTH-INDUCED DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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THEWALT, MLW .

PHYSICAL REVIEW B, 1988, 38 (05) :3587-3590

[4] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

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[5] OPTICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS1-XSBX (0-LESS-THAN-X-LESS-THAN-0.5) ON GAAS AND INP SUBSTRATES [J].

HUANG, D ;

CHYI, J ;

KLEM, J ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5859-5862

[6] EXCITONIC ABSORPTION IN MODULATION-DOPED GAAS/ALXGA1-XAS QUANTUM WELLS [J].

HUANG, D ;

CHU, HY ;

CHANG, YC ;

HOUDRE, R ;

MORKOC, H .

PHYSICAL REVIEW B, 1988, 38 (02) :1246-1250

[7]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[8] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITY BETWEEN IN0.53GA0.47AS [J].

PENG, CK ;

KETTERSON, A ;

MORKOC, H ;

SOLOMON, PM .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1709-1712

[9]

SKOLNICK MS, 1986, PHYS REV B, V33, P8486

[10] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INP ON GAAS [J].

TENG, SJJ ;

BALLINGALL, JM ;

ROSENBAUM, FJ .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1217-1219

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