Depth profiling of surface oxidized TiAlN film by synchrotron radiation excited X-ray photoelectron spectroscopy

Depth profiling analysis of the surface oxide layer of T0.55Al0.45N film was performed by means of synchrotron radiation excited X-ray photoelectron spectroscopy (SR-XPS). The results indicated that the oxidation of nitride and segregation into TiO2 and Al2O3 occur simultaneously and that the Al2O3 layer is formed at the upper surface layer of the film. The depth profile of nitrogen species indicated that molecular N-2 which was formed by the oxidation of the nitride occurred only in the TiO2 matrix. This implied that the surface Al2O3 layer functions as a surface protective layer for not only the inward diffusion of oxygen but also the outward diffusion of molecular N-2.