Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (SThM)

被引：5

作者：

Lee, TH

Guo, X

Shen, GD

Ji, Y

Wang, GH

Du, JY

Wang, XZ

Gao, G

Altes, A

Balk, LJ

Phang, JCH

机构：

[1] Berg Univ Gesamthsch Wuppertal, Fachbereich Elektrotech & Informat Tech, D-42097 Wuppertal, Germany

[2] Natl Univ Singapore, Fac Engn, CICFAR, Singapore 119260, Singapore

[3] Beijing Polytech Univ, Beijing 100022, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(02)00217-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning Thermal Microscopy (SThM) has been used to map the temperature distribution of two light-emitting regions of a tunnel-regenerated multi-active region (TRMAR) light-emitting diode (LED). These LEDs have a high brightness and quantum efficiency. The temperature profile obtained corresponds to the active regions, where both radiative and non-radiative recombination occur. The heating was found to be higher with low current, which is consistent with the analysis of the linear relation between brightness and current. It was further observed that the reverse tunnel junction has slight temperature rise due to higher resistance at low bias and the current spreading effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1711 / 1714

页数：4

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