Thermal characterization of power devices by scanning thermal microscopy techniques

被引：18

作者：

Fiege, GBM ^{[1
]}

Niedernostheide, FJ

Schulze, HJ

Barthelmess, R

Balk, LJ

机构：

[1] Berg Univ Wuppertal, Lehrstuhl Elektr, D-42097 Wuppertal, Germany

[2] Siemens AG, Corp Technol, D-81730 Munich, Germany

[3] Eupec, D-91362 Pretzfeld, Germany

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 6-7期

关键词：

D O I：

10.1016/S0026-2714(99)00163-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scanning thermal microscope (SThM) is used for investigating chip temperatures of power devices under operating conditions enabling the localization of failure-induced hot spots. In this paper, we present the measurement of the temperature distribution on the surface of a free-wheeling diode of an IGBT. A new modulation technique implemented into the SThM for the determination of local quantitative thermal conductivities, the so-called 3 omega technique, is also used for further analyses of defective power devices. With this technique, a non-uniformity of the thermal conductivity in the micrometer range could be found at the anode side of a GTO. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1149 / 1152

页数：4

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