Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO Thin Films

被引：37

作者：

Chen, Xinman ^{[1
]}

Zhao, Lingzhi ^{[1
]}

Niu, Qiaoli ^{[1
]}

机构：

[1] S China Normal Univ, Lab Nanophoton Funct Mat & Devices, Inst Optoelect Mat & Technol, Guangzhou 510631, Guangdong, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Transparent conducting oxide; p-type; NiO thin films; chemical solution deposition; TRANSPARENT CONDUCTING OXIDES;

D O I：

10.1007/s11664-012-2213-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Li,Cu-codoped NiO thin films were deposited on fused silica substrates using a chemical solution deposition method. These thin films were phase-pure and (200) orientated with cubic structure. The transmittance and conductivity for the Li (x) Cu0.1Ni0.9-x O thin films increased as the Li content (x) increased. Transmittance of about 80% in the visible region and an optical bandgap of 3.27 eV were obtained for the Li0.1Cu0.1Ni0.8O thin film. Furthermore, the resistivity was reduced to 0.046 Omega cm for the Li0.1Cu0.1Ni0.8O thin film. The high transmittance and low resistivity resulted from larger grain size, increased as the Li content increased. These results suggest that Li,Cu-codoped NiO thin films can be utilized as p-type transparent conducting oxides.

引用

页码：3382 / 3386

页数：5

共 15 条

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