Band-gap energies of sol-gel-derived SrTiO3 thin films

被引:183
作者
Bao, DH
Yao, X
Wakiya, N
Shinozaki, K
Mizutani, N
机构
[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Meguro Ku, Tokyo 1528552, Japan
[2] Xian Jiaotong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China
关键词
D O I
10.1063/1.1423788
中图分类号
O59 [应用物理学];
学科分类号
摘要
Band-gap energies of sol-gel-derived SrTiO3 thin films were studied in terms of annealing temperature and film thickness. The band-gap energies of highly crystallized films were comparable to those of single crystals reported, whereas for poor-crystallized films, their band-gap energy values were much larger than those of single crystals. The larger band-gap energy shift was believed to be mainly due to both quantum size effect and existence of amorphous phase in thin films. The band-gap energies also showed a strong dependence on film thickness. There was a critical film thickness (similar to 200 nm), above which the films had band-gap energies close to those of crystals or bulks, but below that, the values shifted largely, which can be attributed to the influence of crystallinity of thin films. Such a thickness effect of band-gap energy should be of high interest in optical device applications. (C) 2001 American Institute of Physics.
引用
收藏
页码:3767 / 3769
页数:3
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