Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic. light-emitting diodes

被引：29

作者：

Chu, Ta-Ya ^{[1
]}

Chen, Szu-Yi

Chen, Jenn-Fang

Chen, Chin H.

机构：

[1] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6A期

关键词：

inverted organic light emitting device (IOLED); electron injection; indium tin oxide (ITO);

D O I：

10.1143/JJAP.45.4948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indium-tin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq(3)/NPB/WO3/Al was 4.2V and an efficiencies of 4.66cd/A and 1.51 1m/W were achieved at an operational voltage of 8.9 V and a brightness of 940 cd/m(2). In comparison with an ITO/Alq(3) bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8 V in voltage was obtained at 1 mA/cm(2). A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.

引用

页码：4948 / 4950

页数：3

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