Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer

被引：86

作者：

Choi, HW ^{[1
]}

Kim, SY ^{[1
]}

Kim, WK ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 08期

关键词：

D O I：

10.1063/1.2033129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the enhancement of the electron injection by inserting a 1-nm-thick magnesium oxide (MgO) buffer layer between Al cathode and tris (8-hydroxyquinoline) aluminum in an inverted top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 10 to 6 V and the luminance increased about 61% as the MgO interfacial layer was employed. The MgO interfacial layer played a role in reducing the energy barrier of electron injection, leading to the reduction of the turn-on voltage and the enhancement of luminance. (c) 2005 American Institute of Physics.

引用

页数：3

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