Praseodymium oxide coated anode for organic light-emitting diode

被引：46

作者：

Qiu, CF ^{[1
]}

Chen, HY ^{[1
]}

Xie, ZL ^{[1
]}

Wong, M ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Ctr Display Res, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 19期

关键词：

D O I：

10.1063/1.1476712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capping an indium-tin-oxide anode with a thin layer of praseodymium oxide (Pr2O3) has been found to enhance not only hole-injection, quantum, and power efficiencies but also the lifetime of organic light-emitting diode made using copper (II) phthalocyanine as the anode buffer layer, N, N-'-diphenyl-N,N-' bis(3-methylphenyl-1,1(')-biphenyl-4,4(')-diamine as the hole-transport layer and tris-8-hydroxyquinoline aluminum as the electron-transport/emission layer. The best results have been obtained on diodes with similar to1 nm thick Pr2O3. A possible mechanism behind the improvement is discussed. (C) 2002 American Institute of Physics.

引用

页码：3485 / 3487

页数：3

共 21 条

[1] Polymer/metal interfaces and the performance of polymer light-emitting diodes [J].

Bharathan, JM ;

Yang, Y .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3207-3211

[2] Efficient electron injection in blue-emitting polymer light-emitting diodes with LiF/Ca/Al cathodes [J].

Brown, TM ;

Friend, RH ;

Millard, IS ;

Lacey, DJ ;

Burroughes, JH ;

Cacialli, F .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :174-176

[3] Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes [J].

Choi, B ;

Yoon, H ;

Lee, HH .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :412-414

[4] Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].

Hung, LS ;

Tang, CW ;

Mason, MG .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :152-154

[5] Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer [J].

Ikai, M ;

Tokito, S ;

Sakamoto, Y ;

Suzuki, T ;

Taga, Y .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :156-158

[6] Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance [J].

Kim, JS ;

Granstrom, M ;

Friend, RH ;

Johansson, N ;

Salaneck, WR ;

Daik, R ;

Feast, WJ ;

Cacialli, F .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6859-6870

[7] Energy-level alignment at the tris-(8-hydroxyquinolate)-aluminum/Gd interface and Gd-electron-injection layer for organic electroluminescent device [J].

Kim, SC ;

Kwon, SN ;

Choi, MW ;

Whang, CN ;

Jeong, K ;

Lee, SH ;

Lee, JG ;

Kim, S .

APPLIED PHYSICS LETTERS, 2001, 79 (22) :3726-3728

[8] Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].

Mason, MG ;

Hung, LS ;

Tang, CW ;

Lee, ST ;

Wong, KW ;

Wang, M .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692

[9] Accumulation of positive charges in organic light-emitting diodes with a double-layer structure [J].

Matsumura, M ;

Ito, A ;

Miyamae, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (08) :1042-1044

[10] High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide [J].

Osten, HJ ;

Liu, JP ;

Gaworzewski, P ;

Bugiel, E ;

Zaumseil, P .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :653-656

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