Micro cavity effect in GaN-Based light-emitting diodes formed by laser lift-off and etch-back technique

被引：27

作者：

Fujii, T ^{[1
]}

David, A

Schwach, C

Pattison, PM

Sharma, R

Fujito, K

Margalith, T

Denbaars, SP

Weisbuch, C

Nakamura, S

机构：

[1] Univ Calif Santa Barbara, NICP, ERATO JST, UCSB Grp, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 3B期

关键词：

GaN; LED; laser lift off; micro cavity; far field pattern; detuning;

D O I：

10.1143/JJAP.43.L411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence measurements were performed on GaN-based micro-cavity light-emitting diodes (MCLEDs) which had different cavity thickness. The MCLEDs were fabricated by laser lift off (LLO) technique to remove the sapphire substrate and were thinned with reactive ion etching (RIE) followed by chemical-mechanical polishing (CMP). The number of multiple peaks in the electroluminescence spectrum caused by interference effects decreased as the cavity thickness decreased. A far-field pattern measurement of the thin cavity sample showed a "rabbit ears" pattern, specific of microcavity emission.

引用

页码：L411 / L413

页数：3

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