c-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation

被引：26

作者：

Palkar, VR

Purandare, SC

Pai, SP

Chattopadhyay, S

Apte, PR

Pinto, R

Multani, MS

机构：

[1] Tata Institute of Fundamental Research, Bombay 400-005, Homi Bhabha Road

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.116687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have deposited single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si(100) by pulsed laser ablation technique in situ. It has been shown that the formation of a nonferroelectric, Pb2Ti2O6 pyrochlore phase at the interface could be avoided by raising the substrate temperature. (C) 1996 American Institute of Physics.

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页码：1582 / 1584

页数：3

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