Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

被引：18

作者：

Liao, MY ^{[3
]}

Meng, XM

Zhou, XT

Hu, JQ

Wang, ZG

机构：

[1] Chinese Acad Sci, Inst Met Res, SYNL, Shenyang, Peoples R China

[2] Univ Sci & Technol China, Dept Chem, Struct Res Lab, Anhua 230026, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Science, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 1-3期

关键词：

nucleation; chemical vapor deposition processes; diamond; nanomaterials;

D O I：

10.1016/S0022-0248(01)02160-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 89

页数：5

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