Synthesis of amorphous FeSi2 by ion beam mixing

被引：27

作者：

Milosavljevic, M

Shao, G ^{[1
]}

Bibic, N

McKinty, CN

Jeynes, C

Homewood, KP

机构：

[1] Univ Surrey, Sch Engn, Guildford GU2 7XH, Surrey, England

[2] Univ Surrey, Sch Elect Comput & Math, Guildford GU2 7XH, Surrey, England

[3] VINCA Inst Nucl Sci, YU-11001 Belgrade, Yugoslavia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 188卷

基金：

英国工程与自然科学研究理事会;

关键词：

amorphous semiconductors; Fe-silicides; ion beam mixing; cross-sectional TEM; photo-absorption;

D O I：

10.1016/S0168-583X(01)01068-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];

摘要：

The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion of Si to the surface is assigned to be the dominating process that results in the formation of amorphous FeSi2 phase, Other Synthesis techniques should be possible for fabrication of this material. and it Could be applied in large area electronics, (C) 2002 Published by Elsevier Science B.V.

引用

页码：166 / 169

页数：4

共 19 条

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Simulated annealing analysis of Rutherford backscattering data [J].