Ion-assisted deposition of amorphous GaN: Raman and optical properties

被引：55

作者：

Bittar, A

Trodahl, HJ

Kemp, NT

Markwitz, A

机构：

[1] Ind Res Ltd, Lower Hutt, New Zealand

[2] Victoria Univ Wellington, Sch Chem & Phys Sci, Wellington, New Zealand

[3] Inst Geol & Nucl Sci, Lower Hutt, New Zealand

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 05期

关键词：

D O I：

10.1063/1.1345800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the preparation of amorphous GaN by ion-assisted deposition and studies of the Raman and optical response of the resulting films. The films are transparent across the visible and show an edge whose energy and structure are in close agreement with crystalline material, suggesting a low density of gap states and homopolar bonds. The Raman spectrum is similar to a broadened vibrational density of modes calculated for wurtzite GaN, with a Raman cross section which varies among the vibrational bands. (C) 2001 American Institute of Physics.

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页码：619 / 621

页数：3

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